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The following chapters will be divided into three parts. In Part I, we cover briefly the history of bonding technology in ssss1, starting from wire‐bonding, tab‐automated bonding (TAB), flip chip C‐4 solder joint bonding, micro‐bump bonding, Cu‐to‐Cu direct bonding, and hybrid bonding. In ssss1, we shall cover the structure, properties, and applications of randomly oriented and (111) unidirectionally oriented nano‐twin Cu. Then, ssss1 and ssss1 will be dedicated to chemical reactions and kinetic processes in solder joint formation. ssss1 will review solid–liquid interfacial diffusion (SLID) reactions between liquid solder and Cu. ssss1 will review solid–solid reactions between solid solder and Cu upon annealing. The kinetics of growth of IMC, which is a stoichiometric compound without composition gradient, has been an outstanding problem in the kinetic analysis of layered interfacial reactions. We introduce Wagner’s diffusivity to overcome it.

Part II consists of three chapters related to electric circuitry in electronic packaging. The emphasis is about the design of low‐power devices and high intelligent integration. The technical issues of the need of faster rate and larger amount of data transport are discussed. How to increase the I/O density and the bandwidth in packaging technology are explained.