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After the introduction chapter, the following chapters will be divided into three parts. In ssss1, the history of bonding technology will be covered in ssss1, starting from wire‐bonding, tab‐automated bonding, flip chip C‐4 solder joint bonding, micro‐bump bonding, Cu‐to‐Cu direct bonding, and hybrid bonding. The microstructure, properties, and applications of randomly oriented and (111) uni‐directionally oriented nano‐twin Cu will be covered in ssss1. Then, ssss1 and ssss1 will be dedicated to chemical reactions and kinetic processes in Cu‐Sn reactions for solder joint formation. ssss1 will review solid‐liquid interfacial diffusion (SLID) reactions between liquid solder and Cu. ssss1 will review solid‐solid reactions between solid solder and Cu. The kinetics of growth of intermetallic compound (IMC), which is a stoichiometric compound and has no composition gradient, has been an outstanding problem in solid‐solid reactions. We introduce Wagner’s diffusivity to overcome it.

ssss1 consists of chapters on electric circuit integration in packaging technology. The emphasis is on the design of low power devices and intelligent integration. The technical issues related to the need for faster rates and increased amounts of data transport in 2.5D/3D IC are discussed. It is explained how to increase the I/O density and the bandwidth in packaging technology.